Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
1212
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
47.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Height
1.07mm
Minimum Operating Temperature
-50 °C
Forward Diode Voltage
1.2V
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,117
tk (rullis 3000) (ilma käibemaksuta)
€ 0,143
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,117
tk (rullis 3000) (ilma käibemaksuta)
€ 0,143
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
1212
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
47.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Height
1.07mm
Minimum Operating Temperature
-50 °C
Forward Diode Voltage
1.2V
Päritoluriik
China