N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3

RS tootekood: 178-3899Bränd: Vishay SiliconixTootja Part nr.: SiSS02DN-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Päritoluriik

China

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€ 20,00

€ 2,00 tk (pakis 10) (ilma käibemaksuta)

€ 24,40

€ 2,44 tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3
Valige pakendi tüüp

€ 20,00

€ 2,00 tk (pakis 10) (ilma käibemaksuta)

€ 24,40

€ 2,44 tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more