Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 SiSS12DN-T1-GE3

RS tootekood: 178-3701Bränd: Vishay SiliconixTootja Part nr.: SiSS12DN-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

1

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

59 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Päritoluriik

China

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Lao andmed ajutiselt ei ole saadaval.

€ 1 785,00

€ 0,595 tk (rullis 3000) (ilma käibemaksuta)

€ 2 177,70

€ 0,726 tk (rullis 3000) (koos käibemaksuga)

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 SiSS12DN-T1-GE3

€ 1 785,00

€ 0,595 tk (rullis 3000) (ilma käibemaksuta)

€ 2 177,70

€ 0,726 tk (rullis 3000) (koos käibemaksuga)

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 SiSS12DN-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

1

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

59 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more