N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3

RS tootekood: 178-3708Bränd: Vishay SiliconixTootja Part nr.: SQ2364EES-T1_GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Height

1.02mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,257

tk (rullis 3000) (ilma käibemaksuta)

€ 0,314

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3

€ 0,257

tk (rullis 3000) (ilma käibemaksuta)

€ 0,314

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Height

1.02mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more