Vishay Siliconix TrenchFET P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L SQJ415EP-T1_GE3

RS tootekood: 178-3717Bränd: Vishay SiliconixTootja Part nr.: SQJ415EP-T1_GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

5mm

Transistor Material

Si

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Height

1.07mm

Minimum Operating Temperature

-55 °C

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€ 1 152,00

€ 0,384 tk (rullis 3000) (ilma käibemaksuta)

€ 1 428,48

€ 0,476 tk (rullis 3000) (koos käibemaksuga)

Vishay Siliconix TrenchFET P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L SQJ415EP-T1_GE3

€ 1 152,00

€ 0,384 tk (rullis 3000) (ilma käibemaksuta)

€ 1 428,48

€ 0,476 tk (rullis 3000) (koos käibemaksuga)

Vishay Siliconix TrenchFET P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L SQJ415EP-T1_GE3

Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

5mm

Transistor Material

Si

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more