Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Toote üksikasjad
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,45
tk (pakis 10) (ilma käibemaksuta)
€ 1,769
tk (pakis 10) (koos käibemaksuga)
10
€ 1,45
tk (pakis 10) (ilma käibemaksuta)
€ 1,769
tk (pakis 10) (koos käibemaksuga)
10
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 90 | € 1,45 | € 14,50 |
100 - 240 | € 1,10 | € 11,00 |
250 - 490 | € 0,897 | € 8,97 |
500 - 990 | € 0,796 | € 7,96 |
1000+ | € 0,579 | € 5,79 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Toote üksikasjad