Vishay N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-220AB IRFB13N50APBF

RS tootekood: 708-4759PBränd: VishayTootja Part nr.: IRFB13N50APBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Width

4.7mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 78,75

€ 3,15 tk (torus) (ilma käibemaksuta)

€ 97,65

€ 3,906 tk (torus) (koos käibemaksuga)

Vishay N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-220AB IRFB13N50APBF
Valige pakendi tüüp

€ 78,75

€ 3,15 tk (torus) (ilma käibemaksuta)

€ 97,65

€ 3,906 tk (torus) (koos käibemaksuga)

Vishay N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-220AB IRFB13N50APBF

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

kogusÜhikuhindPer Tuub
25 - 45€ 3,15€ 15,75
50 - 120€ 3,00€ 15,00
125 - 245€ 2,70€ 13,50
250+€ 2,50€ 12,50

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Width

4.7mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more