Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
4.7mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 29.50
€ 2.95 Each (Supplied as a Tape) (Exc. Vat)
€ 36.58
€ 3.66 Each (Supplied as a Tape) (inc. VAT)
Production pack (Tape)
10
€ 29.50
€ 2.95 Each (Supplied as a Tape) (Exc. Vat)
€ 36.58
€ 3.66 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tape)
10
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 10 - 49 | € 2.95 |
| 50 - 99 | € 2.85 |
| 100 - 249 | € 2.65 |
| 250+ | € 2.50 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
4.7mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details


