Vishay N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB IRFBG30PBF

RS tootekood: 919-4508Bränd: VishayTootja Part nr.: IRFBG30PBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 80,00

€ 1,60 tk (torus 50) (ilma käibemaksuta)

€ 97,60

€ 1,952 tk (torus 50) (koos käibemaksuga)

Vishay N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB IRFBG30PBF

€ 80,00

€ 1,60 tk (torus 50) (ilma käibemaksuta)

€ 97,60

€ 1,952 tk (torus 50) (koos käibemaksuga)

Vishay N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB IRFBG30PBF
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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Tuub
50 - 50€ 1,60€ 80,00
100 - 200€ 1,35€ 67,50
250+€ 1,30€ 65,00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more