Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 80,00
€ 1,60 tk (torus 50) (ilma käibemaksuta)
€ 97,60
€ 1,952 tk (torus 50) (koos käibemaksuga)
50
€ 80,00
€ 1,60 tk (torus 50) (ilma käibemaksuta)
€ 97,60
€ 1,952 tk (torus 50) (koos käibemaksuga)
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Tuub |
---|---|---|
50 - 50 | € 1,60 | € 80,00 |
100 - 200 | € 1,35 | € 67,50 |
250+ | € 1,30 | € 65,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad