Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Minimum Operating Temperature
-55 °C
Height
3.37mm
Toote üksikasjad
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,55
tk (lindis) (ilma käibemaksuta)
€ 3,11
tk (lindis) (koos käibemaksuga)
1
€ 2,55
tk (lindis) (ilma käibemaksuta)
€ 3,11
tk (lindis) (koos käibemaksuga)
1
Osta lahtiselt
kogus | Ühikuhind |
---|---|
1 - 19 | € 2,55 |
20 - 24 | € 0,66 |
25 - 49 | € 0,59 |
50+ | € 0,54 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Minimum Operating Temperature
-55 °C
Height
3.37mm
Toote üksikasjad