Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
Päritoluriik
Philippines
Toote üksikasjad
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,30
tk (torus 100) (ilma käibemaksuta)
€ 1,586
tk (torus 100) (koos käibemaksuga)
100
€ 1,30
tk (torus 100) (ilma käibemaksuta)
€ 1,586
tk (torus 100) (koos käibemaksuga)
100
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
100 - 100 | € 1,30 | € 130,00 |
200 - 400 | € 1,30 | € 130,00 |
500+ | € 1,20 | € 120,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
Päritoluriik
Philippines
Toote üksikasjad