P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP Vishay IRFD9020PBF

RS tootekood: 145-1912Bränd: VishayTootja Part nr.: IRFD9020PBF
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.29mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

3.37mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

6.3V

Päritoluriik

Philippines

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 1,30

tk (torus 100) (ilma käibemaksuta)

€ 1,586

tk (torus 100) (koos käibemaksuga)

P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP Vishay IRFD9020PBF

€ 1,30

tk (torus 100) (ilma käibemaksuta)

€ 1,586

tk (torus 100) (koos käibemaksuga)

P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP Vishay IRFD9020PBF
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Tuub
100 - 100€ 1,30€ 130,00
200 - 400€ 1,30€ 130,00
500+€ 1,20€ 120,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.29mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

3.37mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

6.3V

Päritoluriik

Philippines

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more