N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP Vishay IRFI510GPBF

RS tootekood: 145-2042Bränd: VishayTootja Part nr.: IRFI510GPBF
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.63mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

16.12mm

Päritoluriik

China

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N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,562

tk (torus 50) (ilma käibemaksuta)

€ 0,686

tk (torus 50) (koos käibemaksuga)

N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP Vishay IRFI510GPBF

€ 0,562

tk (torus 50) (ilma käibemaksuta)

€ 0,686

tk (torus 50) (koos käibemaksuga)

N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP Vishay IRFI510GPBF
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Tuub
50 - 450€ 0,562€ 28,10
500 - 1200€ 0,528€ 26,40
1250 - 2450€ 0,477€ 23,85
2500 - 4950€ 0,449€ 22,45
5000+€ 0,421€ 21,05

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.63mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

16.12mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more