Vishay N-Channel MOSFET, 37 A, 60 V, 3-Pin TO-220FP IRFIZ48GPBF

RS tootekood: 918-9865Bränd: VishayTootja Part nr.: IRFIZ48GPBF
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.8mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 87,50

€ 1,75 tk (torus 50) (ilma käibemaksuta)

€ 108,50

€ 2,17 tk (torus 50) (koos käibemaksuga)

Vishay N-Channel MOSFET, 37 A, 60 V, 3-Pin TO-220FP IRFIZ48GPBF

€ 87,50

€ 1,75 tk (torus 50) (ilma käibemaksuta)

€ 108,50

€ 2,17 tk (torus 50) (koos käibemaksuga)

Vishay N-Channel MOSFET, 37 A, 60 V, 3-Pin TO-220FP IRFIZ48GPBF
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.8mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more