Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50PBF

RS tootekood: 542-9838Bränd: VishayTootja Part nr.: IRFPC50PBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

180 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC @ 10 V

Height

20.7mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 4,70

€ 4,70 tk (ilma käibemaksuta)

€ 5,73

€ 5,73 tk (koos käibemaksuga)

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50PBF
Valige pakendi tüüp

€ 4,70

€ 4,70 tk (ilma käibemaksuta)

€ 5,73

€ 5,73 tk (koos käibemaksuga)

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50PBF
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

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kogusÜhikuhind
1 - 9€ 4,70
10 - 49€ 4,25
50 - 99€ 4,00
100 - 249€ 3,85
250+€ 3,50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

180 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC @ 10 V

Height

20.7mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada