Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.8 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 54.70
€ 0.547 Each (Supplied on a Reel) (Exc. Vat)
€ 67.83
€ 0.678 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
€ 54.70
€ 0.547 Each (Supplied on a Reel) (Exc. Vat)
€ 67.83
€ 0.678 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 240 | € 0.547 | € 5.47 |
| 250 - 490 | € 0.494 | € 4.94 |
| 500 - 990 | € 0.465 | € 4.65 |
| 1000+ | € 0.437 | € 4.37 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.8 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details


