Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
250 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Transistor Material
Si
Width
6.22mm
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
China
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 2.27
€ 0.227 Each (Supplied on a Reel) (Exc. Vat)
€ 2.81
€ 0.281 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
€ 2.27
€ 0.227 Each (Supplied on a Reel) (Exc. Vat)
€ 2.81
€ 0.281 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
250 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Transistor Material
Si
Width
6.22mm
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
China
Product details


