N-Channel MOSFET, 2.5 A, 60 V, 4-Pin HVMDIP Vishay IRLD024PBF

RS tootekood: 541-0632Bränd: VishayTootja Part nr.: IRLD024PBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

18 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

3.37mm

Toote üksikasjad

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRLD024 2.5A 60V
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€ 1,85

tk (ilma käibemaksuta)

€ 2,26

tk (koos käibemaksuga)

N-Channel MOSFET, 2.5 A, 60 V, 4-Pin HVMDIP Vishay IRLD024PBF
Valige pakendi tüüp

€ 1,85

tk (ilma käibemaksuta)

€ 2,26

tk (koos käibemaksuga)

N-Channel MOSFET, 2.5 A, 60 V, 4-Pin HVMDIP Vishay IRLD024PBF
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhind
1 - 9€ 1,85
10 - 49€ 1,60
50 - 99€ 1,50
100 - 249€ 1,40
250+€ 1,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
N-channel MOSFET,IRLD024 2.5A 60V
P.O.A.tk (ilma käibemaksuta)

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

18 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

3.37mm

Toote üksikasjad

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
N-channel MOSFET,IRLD024 2.5A 60V
P.O.A.tk (ilma käibemaksuta)