N-Channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523 Vishay SI1050X-T1-GE3

RS tootekood: 812-3035Bränd: VishayTootja Part nr.: SI1050X-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.34 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

236 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +5 V

Width

1.2mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

7.7 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

0.6mm

Toote üksikasjad

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,155

tk (pakis 20) (ilma käibemaksuta)

€ 0,189

tk (pakis 20) (koos käibemaksuga)

N-Channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523 Vishay SI1050X-T1-GE3
Valige pakendi tüüp

€ 0,155

tk (pakis 20) (ilma käibemaksuta)

€ 0,189

tk (pakis 20) (koos käibemaksuga)

N-Channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523 Vishay SI1050X-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.34 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

236 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +5 V

Width

1.2mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

7.7 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

0.6mm

Toote üksikasjad

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more