N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 Vishay SI1302DL-T1-E3

RS tootekood: 655-6795PBränd: VishayTootja Part nr.: SI1302DL-T1-E3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

480 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

0.86 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Transistor Material

Si

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Toote üksikasjad

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,406

tk (rullis) (ilma käibemaksuta)

€ 0,495

tk (rullis) (koos käibemaksuga)

N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 Vishay SI1302DL-T1-E3
Valige pakendi tüüp

€ 0,406

tk (rullis) (ilma käibemaksuta)

€ 0,495

tk (rullis) (koos käibemaksuga)

N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 Vishay SI1302DL-T1-E3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Rull
10 - 90€ 0,406€ 4,06
100 - 490€ 0,305€ 3,05
500 - 990€ 0,285€ 2,85
1000 - 2490€ 0,224€ 2,24
2500+€ 0,192€ 1,92

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

480 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

0.86 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Transistor Material

Si

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Toote üksikasjad

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more