Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363 (SC-70)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
222 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
600 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Toote üksikasjad
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,108
tk (lindis) (ilma käibemaksuta)
€ 0,132
tk (lindis) (koos käibemaksuga)
25
€ 0,108
tk (lindis) (ilma käibemaksuta)
€ 0,132
tk (lindis) (koos käibemaksuga)
25
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363 (SC-70)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
222 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
600 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Toote üksikasjad