P-Channel MOSFET, 4 A, 20 V, 6-Pin SOT-363 Vishay SI1441EDH-T1-GE3

RS tootekood: 812-3079PBränd: VishayTootja Part nr.: SI1441EDH-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

22 nC @ 8 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,50

tk (rullis) (ilma käibemaksuta)

€ 0,61

tk (rullis) (koos käibemaksuga)

P-Channel MOSFET, 4 A, 20 V, 6-Pin SOT-363 Vishay SI1441EDH-T1-GE3
Valige pakendi tüüp

€ 0,50

tk (rullis) (ilma käibemaksuta)

€ 0,61

tk (rullis) (koos käibemaksuga)

P-Channel MOSFET, 4 A, 20 V, 6-Pin SOT-363 Vishay SI1441EDH-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Rull
20 - 180€ 0,50€ 10,00
200 - 480€ 0,381€ 7,62
500 - 980€ 0,351€ 7,02
1000 - 1980€ 0,30€ 6,00
2000+€ 0,26€ 5,20

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

22 nC @ 8 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more