Dual N-Channel MOSFET Transistor, 1.13 A, 20 V, 6-Pin SOT-363 Vishay SI1912EDH-T1-E3
Tehnilised dokumendid
Spetsifikatsioonid:
Channel Mode
Enhancement
Number of Elements per Chip
2
Channel Type
N
Minimum Operating Temperature
-55 °C
Pin Count
6
Minimum Gate Threshold Voltage
0.45V
Maximum Gate Source Voltage
-12 V, +12 V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Width
1.25mm
Height
0.9mm
Length
2.05mm
Maximum Continuous Drain Current
1.13 A
Package Type
SOT-363
Maximum Drain Source Resistance
280 mΩ
Brand
VishayPäritoluriik
China
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
P.O.A.
Standard
10
P.O.A.
Standard
10
Ideate. Create. Collaborate
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Tehnilised dokumendid
Spetsifikatsioonid:
Channel Mode
Enhancement
Number of Elements per Chip
2
Channel Type
N
Minimum Operating Temperature
-55 °C
Pin Count
6
Minimum Gate Threshold Voltage
0.45V
Maximum Gate Source Voltage
-12 V, +12 V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Width
1.25mm
Height
0.9mm
Length
2.05mm
Maximum Continuous Drain Current
1.13 A
Package Type
SOT-363
Maximum Drain Source Resistance
280 mΩ
Brand
VishayPäritoluriik
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products