P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Vishay SI2303CDS-T1-GE3

RS tootekood: 710-3241PBränd: VishayTootja Part nr.: SI2303CDS-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

2 nC @ 4.5 V, 4 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.02mm

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Palun kontrollige hiljem uuesti.

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€ 0,378

tk (rullis) (ilma käibemaksuta)

€ 0,461

tk (rullis) (koos käibemaksuga)

P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Vishay SI2303CDS-T1-GE3
Valige pakendi tüüp

€ 0,378

tk (rullis) (ilma käibemaksuta)

€ 0,461

tk (rullis) (koos käibemaksuga)

P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Vishay SI2303CDS-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

2 nC @ 4.5 V, 4 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.02mm

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more