Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3

Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
23 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 4.09
€ 0.409 Each (In a Pack of 10) (Exc. Vat)
€ 5.07
€ 0.507 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 4.09
€ 0.409 Each (In a Pack of 10) (Exc. Vat)
€ 5.07
€ 0.507 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | € 0.409 | € 4.09 |
| 100 - 490 | € 0.384 | € 3.84 |
| 500 - 990 | € 0.346 | € 3.46 |
| 1000 - 2490 | € 0.327 | € 3.27 |
| 2500+ | € 0.307 | € 3.07 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
23 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Product details

