N-Channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-23 Vishay SI2374DS-T1-GE3

RS tootekood: 152-6360Bränd: VishayTootja Part nr.: SI2374DS-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Width

1.4mm

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

13.4 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.02mm

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,326

tk (pakis 50) (ilma käibemaksuta)

€ 0,398

tk (pakis 50) (koos käibemaksuga)

N-Channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-23 Vishay SI2374DS-T1-GE3
Valige pakendi tüüp

€ 0,326

tk (pakis 50) (ilma käibemaksuta)

€ 0,398

tk (pakis 50) (koos käibemaksuga)

N-Channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-23 Vishay SI2374DS-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
50 - 200€ 0,326€ 16,30
250 - 450€ 0,228€ 11,40
500 - 1200€ 0,202€ 10,10
1250 - 2450€ 0,147€ 7,35
2500+€ 0,114€ 5,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Width

1.4mm

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

13.4 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.02mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more