P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493BDV-T1-GE3

RS tootekood: 152-6371Bränd: VishayTootja Part nr.: SI3493BDV-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-0.9V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

2.97 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

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€ 0,85

tk (pakis 10) (ilma käibemaksuta)

€ 1,037

tk (pakis 10) (koos käibemaksuga)

P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493BDV-T1-GE3
Valige pakendi tüüp

€ 0,85

tk (pakis 10) (ilma käibemaksuta)

€ 1,037

tk (pakis 10) (koos käibemaksuga)

P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493BDV-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 90€ 0,85€ 8,50
100 - 240€ 0,80€ 8,00
250 - 490€ 0,722€ 7,22
500 - 990€ 0,681€ 6,81
1000+€ 0,638€ 6,38

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-0.9V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

2.97 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C