Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Päritoluriik
Taiwan, Province Of China
Toote üksikasjad
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 950,00
€ 0,38 tk (rullis 2500) (ilma käibemaksuta)
€ 1 159,00
€ 0,464 tk (rullis 2500) (koos käibemaksuga)
2500
€ 950,00
€ 0,38 tk (rullis 2500) (ilma käibemaksuta)
€ 1 159,00
€ 0,464 tk (rullis 2500) (koos käibemaksuga)
2500
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
19.6 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Päritoluriik
Taiwan, Province Of China
Toote üksikasjad