Vishay N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC SI4116DY-T1-GE3

RS tootekood: 710-3317PBränd: VishayTootja Part nr.: SI4116DY-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12.7 A

Maximum Drain Source Voltage

25 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

17.5 nC @ 4.5 V, 37 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 42,20

€ 0,844 tk (rullis) (ilma käibemaksuta)

€ 52,33

€ 1,047 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC SI4116DY-T1-GE3
Valige pakendi tüüp

€ 42,20

€ 0,844 tk (rullis) (ilma käibemaksuta)

€ 52,33

€ 1,047 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC SI4116DY-T1-GE3

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

kogusÜhikuhindPer Rull
50 - 245€ 0,844€ 4,22
250 - 495€ 0,763€ 3,82
500 - 1245€ 0,72€ 3,60
1250+€ 0,676€ 3,38

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12.7 A

Maximum Drain Source Voltage

25 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

17.5 nC @ 4.5 V, 37 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more