N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3

RS tootekood: 812-3205Bränd: VishayTootja Part nr.: SI4178DY-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Päritoluriik

China

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N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Palun kontrollige hiljem uuesti.

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€ 0,597

tk (pakis 20) (ilma käibemaksuta)

€ 0,728

tk (pakis 20) (koos käibemaksuga)

N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3
Valige pakendi tüüp

€ 0,597

tk (pakis 20) (ilma käibemaksuta)

€ 0,728

tk (pakis 20) (koos käibemaksuga)

N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
20 - 180€ 0,597€ 11,94
200 - 480€ 0,477€ 9,54
500 - 980€ 0,447€ 8,94
1000 - 1980€ 0,388€ 7,76
2000+€ 0,323€ 6,46

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more