Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Height
1.55mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 74,20
€ 0,371 tk (rullis) (ilma käibemaksuta)
€ 92,01
€ 0,46 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
200
€ 74,20
€ 0,371 tk (rullis) (ilma käibemaksuta)
€ 92,01
€ 0,46 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
200
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
200 - 480 | € 0,371 | € 7,42 |
500 - 980 | € 0,348 | € 6,96 |
1000 - 1980 | € 0,302 | € 6,04 |
2000+ | € 0,251 | € 5,02 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Height
1.55mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad