Vishay N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC SI4178DY-T1-GE3

RS tootekood: 812-3205PBränd: VishayTootja Part nr.: SI4178DY-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+150 °C

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Height

1.55mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 74,20

€ 0,371 tk (rullis) (ilma käibemaksuta)

€ 92,01

€ 0,46 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC SI4178DY-T1-GE3
Valige pakendi tüüp

€ 74,20

€ 0,371 tk (rullis) (ilma käibemaksuta)

€ 92,01

€ 0,46 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC SI4178DY-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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kogusÜhikuhindPer Rull
200 - 480€ 0,371€ 7,42
500 - 980€ 0,348€ 6,96
1000 - 1980€ 0,302€ 6,04
2000+€ 0,251€ 5,02

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+150 °C

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Height

1.55mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada