P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

RS tootekood: 812-3215PBränd: VishayTootja Part nr.: SI4431CDY-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.55mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,974

tk (rullis) (ilma käibemaksuta)

€ 1,188

tk (rullis) (koos käibemaksuga)

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3
Valige pakendi tüüp

€ 0,974

tk (rullis) (ilma käibemaksuta)

€ 1,188

tk (rullis) (koos käibemaksuga)

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Rull
20 - 80€ 0,974€ 19,48
100 - 180€ 0,78€ 15,60
200 - 480€ 0,74€ 14,80
500 - 980€ 0,702€ 14,04
1000+€ 0,662€ 13,24

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.55mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more