Dual N/P-Channel MOSFET, 3.7 A, 7.2 A, 20 V, 8-Pin SOIC Vishay SI4511DY-T1-GE3

Brand

Channel Type

N, P

Maximum Continuous Drain Current

3.7 A, 7.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ, 50 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-16 V, -12 V, +12 V, +16 V

Transistor Material

Si

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

11.5 nC @ 10 V, 17 nC @ 10 V

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Päritoluriik

China