Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Päritoluriik
China
Toote üksikasjad
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,856
tk (rullis) (ilma käibemaksuta)
€ 1,044
tk (rullis) (koos käibemaksuga)
20
€ 0,856
tk (rullis) (ilma käibemaksuta)
€ 1,044
tk (rullis) (koos käibemaksuga)
20
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
20 - 180 | € 0,856 | € 17,12 |
200 - 480 | € 0,659 | € 13,18 |
500 - 980 | € 0,556 | € 11,12 |
1000 - 1980 | € 0,513 | € 10,26 |
2000+ | € 0,429 | € 8,58 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Päritoluriik
China
Toote üksikasjad