Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3

RS tootekood: 787-9008Bränd: VishayTootja Part nr.: SI4948BEY-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

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Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 1,45

tk (pakis 5) (ilma käibemaksuta)

€ 1,769

tk (pakis 5) (koos käibemaksuga)

Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3
Valige pakendi tüüp

€ 1,45

tk (pakis 5) (ilma käibemaksuta)

€ 1,769

tk (pakis 5) (koos käibemaksuga)

Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
5 - 45€ 1,45€ 7,25
50 - 245€ 1,25€ 6,25
250 - 495€ 0,998€ 4,99
500 - 1245€ 0,829€ 4,14
1250+€ 0,758€ 3,79

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Toote üksikasjad

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more