Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.47 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Length
3mm
Typical Gate Charge @ Vgs
26.2 nC @ 10 V
Width
1.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.8mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,261
tk (rullis 3000) (ilma käibemaksuta)
€ 0,318
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,261
tk (rullis 3000) (ilma käibemaksuta)
€ 0,318
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.47 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Length
3mm
Typical Gate Charge @ Vgs
26.2 nC @ 10 V
Width
1.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.8mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad