Dual N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5936DU-T1-GE3

RS tootekood: 818-1356Bränd: VishayTootja Part nr.: SI5936DU-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

10.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

3.08mm

Typical Gate Charge @ Vgs

7 nC @ 10 V

Width

1.98mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.85mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

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Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,226

tk (lindis) (ilma käibemaksuta)

€ 0,276

tk (lindis) (koos käibemaksuga)

Dual N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5936DU-T1-GE3
Valige pakendi tüüp

€ 0,226

tk (lindis) (ilma käibemaksuta)

€ 0,276

tk (lindis) (koos käibemaksuga)

Dual N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5936DU-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

10.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

3.08mm

Typical Gate Charge @ Vgs

7 nC @ 10 V

Width

1.98mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.85mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more