Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
10.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.98mm
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.08mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Height
0.85mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,325
tk (lindis) (ilma käibemaksuta)
€ 0,397
tk (lindis) (koos käibemaksuga)
20
€ 0,325
tk (lindis) (ilma käibemaksuta)
€ 0,397
tk (lindis) (koos käibemaksuga)
20
Osta lahtiselt
kogus | Ühikuhind | Per Lint |
---|---|---|
20 - 180 | € 0,325 | € 6,50 |
200 - 380 | € 0,29 | € 5,80 |
400+ | € 0,286 | € 5,72 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
10.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.98mm
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.08mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Height
0.85mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China