P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3

RS tootekood: 710-3386Bränd: VishayTootja Part nr.: SI7309DN-T1-E3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.05mm

Width

3.05mm

Minimum Operating Temperature

-65 °C

Height

1.04mm

Päritoluriik

China

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P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

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€ 1,05

tk (pakis 5) (ilma käibemaksuta)

€ 1,281

tk (pakis 5) (koos käibemaksuga)

P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3
Valige pakendi tüüp

€ 1,05

tk (pakis 5) (ilma käibemaksuta)

€ 1,281

tk (pakis 5) (koos käibemaksuga)

P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
5 - 45€ 1,05€ 5,25
50 - 245€ 0,735€ 3,68
250 - 495€ 0,651€ 3,26
500 - 1245€ 0,549€ 2,74
1250+€ 0,495€ 2,48

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.05mm

Width

3.05mm

Minimum Operating Temperature

-65 °C

Height

1.04mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more