Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,842
tk (pakis 10) (ilma käibemaksuta)
€ 1,027
tk (pakis 10) (koos käibemaksuga)
10
€ 0,842
tk (pakis 10) (ilma käibemaksuta)
€ 1,027
tk (pakis 10) (koos käibemaksuga)
10
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 90 | € 0,842 | € 8,42 |
100 - 240 | € 0,791 | € 7,91 |
250 - 490 | € 0,716 | € 7,16 |
500 - 990 | € 0,674 | € 6,74 |
1000+ | € 0,633 | € 6,33 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad