Dual N-Channel MOSFET Transistor, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

RS tootekood: 919-5873Bränd: VishayTootja Part nr.: SI9945BDY-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.1 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Päritoluriik

Taiwan, Province Of China

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Teid võib huvitada
Vishay Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC SI9945BDY-T1-GE3
€ 0,729tk (rullis 2500) (ilma käibemaksuta)
Lao andmed ajutiselt ei ole saadaval.

P.O.A.

tk (rullis 2500) (ilma käibemaksuta)

Dual N-Channel MOSFET Transistor, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

P.O.A.

tk (rullis 2500) (ilma käibemaksuta)

Dual N-Channel MOSFET Transistor, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
Vishay Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC SI9945BDY-T1-GE3
€ 0,729tk (rullis 2500) (ilma käibemaksuta)

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.1 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Päritoluriik

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
Vishay Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC SI9945BDY-T1-GE3
€ 0,729tk (rullis 2500) (ilma käibemaksuta)