Vishay ThunderFET N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 SIA416DJ-T1-GE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
PowerPAK SC-70
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.15mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
2.15mm
Transistor Material
Si
Height
0.75mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 11,42
€ 0,571 tk (pakis 20) (ilma käibemaksuta)
€ 13,93
€ 0,697 tk (pakis 20) (koos käibemaksuga)
Standard
20
€ 11,42
€ 0,571 tk (pakis 20) (ilma käibemaksuta)
€ 13,93
€ 0,697 tk (pakis 20) (koos käibemaksuga)
Standard
20
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 20 - 180 | € 0,571 | € 11,42 |
| 200 - 480 | € 0,47 | € 9,40 |
| 500 - 980 | € 0,428 | € 8,56 |
| 1000 - 1980 | € 0,40 | € 8,00 |
| 2000+ | € 0,343 | € 6,86 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Series
ThunderFET
Package Type
PowerPAK SC-70
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.15mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
2.15mm
Transistor Material
Si
Height
0.75mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products