N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3

RS tootekood: 145-1660Bränd: VishayTootja Part nr.: SIHP6N40D-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

400 V

Series

D Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 46,45

€ 0,929 tk (torus 50) (ilma käibemaksuta)

€ 56,67

€ 1,133 tk (torus 50) (koos käibemaksuga)

N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3

€ 46,45

€ 0,929 tk (torus 50) (ilma käibemaksuta)

€ 56,67

€ 1,133 tk (torus 50) (koos käibemaksuga)

N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Tuub
50 - 50€ 0,929€ 46,45
100 - 200€ 0,734€ 36,70
250+€ 0,65€ 32,50

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

400 V

Series

D Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more