Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 46,45
€ 0,929 tk (torus 50) (ilma käibemaksuta)
€ 56,67
€ 1,133 tk (torus 50) (koos käibemaksuga)
50
€ 46,45
€ 0,929 tk (torus 50) (ilma käibemaksuta)
€ 56,67
€ 1,133 tk (torus 50) (koos käibemaksuga)
50
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
50 - 50 | € 0,929 | € 46,45 |
100 - 200 | € 0,734 | € 36,70 |
250+ | € 0,65 | € 32,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad