N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Toote üksikasjad
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,45
tk (pakis 5) (ilma käibemaksuta)
€ 1,769
tk (pakis 5) (koos käibemaksuga)
5
€ 1,45
tk (pakis 5) (ilma käibemaksuta)
€ 1,769
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 5 - 45 | € 1,45 | € 7,25 |
| 50 - 120 | € 1,30 | € 6,50 |
| 125 - 245 | € 1,15 | € 5,75 |
| 250 - 495 | € 1,05 | € 5,25 |
| 500+ | € 1,00 | € 5,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Toote üksikasjad
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products