Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Toote üksikasjad
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 7,25
€ 1,45 tk (pakis 5) (ilma käibemaksuta)
€ 8,85
€ 1,769 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 7,25
€ 1,45 tk (pakis 5) (ilma käibemaksuta)
€ 8,85
€ 1,769 tk (pakis 5) (koos käibemaksuga)
Standard
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 45 | € 1,45 | € 7,25 |
50 - 120 | € 1,30 | € 6,50 |
125 - 245 | € 1,15 | € 5,75 |
250 - 495 | € 1,05 | € 5,25 |
500+ | € 1,00 | € 5,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Toote üksikasjad