Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,373
tk (rullis) (ilma käibemaksuta)
€ 0,455
tk (rullis) (koos käibemaksuga)
5
€ 0,373
tk (rullis) (ilma käibemaksuta)
€ 0,455
tk (rullis) (koos käibemaksuga)
5
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
Päritoluriik
China
Toote üksikasjad