N-Channel MOSFET, 100 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR680DP-T1-RE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Series
TrenchFET
Toote üksikasjad
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,40
tk (pakis 2) (ilma käibemaksuta)
€ 2,928
tk (pakis 2) (koos käibemaksuga)
2
€ 2,40
tk (pakis 2) (ilma käibemaksuta)
€ 2,928
tk (pakis 2) (koos käibemaksuga)
2
Osta lahtiselt
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 2 - 18 | € 2,40 | € 4,80 |
| 20 - 98 | € 2,30 | € 4,60 |
| 100 - 198 | € 2,05 | € 4,10 |
| 200 - 498 | € 1,95 | € 3,90 |
| 500+ | € 1,80 | € 3,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Series
TrenchFET
Toote üksikasjad
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products