Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Width
5.26mm
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Toote üksikasjad
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,60
tk (pakis 5) (ilma käibemaksuta)
€ 1,952
tk (pakis 5) (koos käibemaksuga)
5
€ 1,60
tk (pakis 5) (ilma käibemaksuta)
€ 1,952
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 45 | € 1,60 | € 8,00 |
50 - 120 | € 1,35 | € 6,75 |
125 - 245 | € 1,30 | € 6,50 |
250 - 495 | € 1,20 | € 6,00 |
500+ | € 1,10 | € 5,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Width
5.26mm
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Toote üksikasjad