Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
80 A, 143 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAIR 3 x 3FDC
Pin Count
6
Maximum Drain Source Resistance
0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Series
TrenchFET® Gen IV
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,947
tk (rullis 3000) (ilma käibemaksuta)
€ 1,155
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,947
tk (rullis 3000) (ilma käibemaksuta)
€ 1,155
tk (rullis 3000) (koos käibemaksuga)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
80 A, 143 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAIR 3 x 3FDC
Pin Count
6
Maximum Drain Source Resistance
0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Series
TrenchFET® Gen IV
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products