P-Channel MOSFET, 2.8 A, 60 V, 3-Pin SOT-23 Vishay SQ2361ES-T1_GE3

RS tootekood: 152-6376Bränd: VishayTootja Part nr.: SQ2361ES-T1_GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-2.5V

Minimum Gate Threshold Voltage

-1.5V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.04mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

-1.2V

Automotive Standard

AEC-Q101

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Palun kontrollige hiljem uuesti.

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€ 0,206

tk (pakis 25) (ilma käibemaksuta)

€ 0,251

tk (pakis 25) (koos käibemaksuga)

P-Channel MOSFET, 2.8 A, 60 V, 3-Pin SOT-23 Vishay SQ2361ES-T1_GE3
Valige pakendi tüüp

€ 0,206

tk (pakis 25) (ilma käibemaksuta)

€ 0,251

tk (pakis 25) (koos käibemaksuga)

P-Channel MOSFET, 2.8 A, 60 V, 3-Pin SOT-23 Vishay SQ2361ES-T1_GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-2.5V

Minimum Gate Threshold Voltage

-1.5V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.04mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

-1.2V

Automotive Standard

AEC-Q101