Vishay SQ Rugged P-Channel MOSFET, 17 A, 40 V, 8-Pin SOIC SQ4401EY-T1_GE3

RS Stock No.: 819-3917Brand: VishayManufacturers Part No.: SQ4401EY-T1_GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

40 V

Series

SQ Rugged

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

7.14 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

74 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 25.50

€ 2.55 Each (In a Pack of 10) (Exc. Vat)

€ 31.11

€ 3.111 Each (In a Pack of 10) (inc. VAT)

Vishay SQ Rugged P-Channel MOSFET, 17 A, 40 V, 8-Pin SOIC SQ4401EY-T1_GE3
Select packaging type

€ 25.50

€ 2.55 Each (In a Pack of 10) (Exc. Vat)

€ 31.11

€ 3.111 Each (In a Pack of 10) (inc. VAT)

Vishay SQ Rugged P-Channel MOSFET, 17 A, 40 V, 8-Pin SOIC SQ4401EY-T1_GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
10 - 40€ 2.55€ 25.50
50 - 90€ 2.05€ 20.50
100 - 240€ 1.80€ 18.00
250 - 490€ 1.65€ 16.50
500+€ 1.40€ 14.00

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

40 V

Series

SQ Rugged

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

7.14 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

74 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more