Vishay 3 N/P-Channel MOSFET, 30 A, 30 A, 20 A, 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V, 10-Pin Triple Die

RS tootekood: 188-5065PBränd: VishayTootja Part nr.: SQUN702E-T1_GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

30 A, 30 A, 20 A

Maximum Drain Source Voltage

200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V

Package Type

Triple Die

Mounting Type

Surface Mount

Pin Count

10

Maximum Drain Source Resistance

0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V

Minimum Gate Threshold Voltage

1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V

Maximum Power Dissipation

48 W, 48 W, 60 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

3

Typical Gate Charge @ Vgs

14 nC @ 100 V (Channel 3), 23 nC @ 20 V (Channel 2), 30.2 nC @ 20 V (Channel 1)

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Päritoluriik

China

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Lao andmed ajutiselt ei ole saadaval.

€ 88,75

tk (rullis) (ilma käibemaksuta)

€ 110,05

tk (rullis) (koos käibemaksuga)

Vishay 3 N/P-Channel MOSFET, 30 A, 30 A, 20 A, 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V, 10-Pin Triple Die
Valige pakendi tüüp

€ 88,75

tk (rullis) (ilma käibemaksuta)

€ 110,05

tk (rullis) (koos käibemaksuga)

Vishay 3 N/P-Channel MOSFET, 30 A, 30 A, 20 A, 200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V, 10-Pin Triple Die
Lao andmed ajutiselt ei ole saadaval.
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

30 A, 30 A, 20 A

Maximum Drain Source Voltage

200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V

Package Type

Triple Die

Mounting Type

Surface Mount

Pin Count

10

Maximum Drain Source Resistance

0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V

Minimum Gate Threshold Voltage

1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V

Maximum Power Dissipation

48 W, 48 W, 60 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

3

Typical Gate Charge @ Vgs

14 nC @ 100 V (Channel 3), 23 nC @ 20 V (Channel 2), 30.2 nC @ 20 V (Channel 1)

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more